| 发明名称 |
Verfahren zur Herstellung einer alternierenden Folge monokristalliner Halbleiterschichten und Isolierschichten. |
| 摘要 |
Method for producing a layer of a monocrystalline semiconductor material on a layer of an insulating material (20, 21). To do this, an epitaxial growth is effected in a cavity (30) closed by layers of dielectric material (20, 40, 41), starting from seeds (38, 39) of monocrystalline semiconductor material (38, 39) of a substrate. …<??>This method thus permits three-dimensional integration of semiconductor components. …<IMAGE>… |
| 申请公布号 |
DE68917350(T2) |
申请公布日期 |
1995.01.05 |
| 申请号 |
DE1989617350T |
申请日期 |
1989.04.04 |
| 申请人 |
THOMSON-CSF, PARIS, FR |
发明人 |
PRIBAT, DIDIER, F-92045 PARIS LA DEFENSE, FR;KARAPIPERIS, LEONIDAS, F-92045 PARIS LA DEFENSE, FR;COLLET, CHRISTIAN, F-92045 PARIS LA DEFENSE, FR;GARRY, GUY, F-92045 PARIS LA DEFENSE, FR |
| 分类号 |
H01L21/20;H01L21/205;H01L21/31;H01L21/762;H01L21/84;H01L27/00;(IPC1-7):H01L21/20;H01L21/76 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
