Method for depositing a superconducting thin film

摘要

The invention relates to a method for depositing a superconducting thin film comprising Bi2Sr2Ca1Cu2Oapprox.8.15 by cathodic sputtering of a target with composition Bi2.05Sr2Ca1Cu2O8+ delta on a substrate, delta indicating a number between 0 and 0.4 and the target and the subtrate to be coated being planar. In this case, the substrate to be coated is firmly bonded on an electrical heating block, arranged parallel to the planar target, at a separation of 16.5 to 21.5 mm, in the sputtering chamber, pure oxygen at a pressure of 1 to 5 mbar is caused to flow through the sputtering chamber, the heating block is heated and, by application of a voltage in the range of 300 to 350 volts between the substrate and the target, a discharge plasma is struck. In this case, the target is atomised (sputtered off) and the atomised material deposits on the substrate lying opposite. When the film has reached the desired layer thickness, the coated substrate is left at elevated temperature for a further 30 minutes in the sputtering chamber at the selected oxygen pressure in the range of 1 to 5 mbar. During atomisation of the target and while the coated substrate is being maintained in the sputtering chamber, after the discharge plasma has been turned off, at the selected pressure in the range of 1 to 5 mbar, a temperature in the range of 820 to 840 DEG C is set in the heating block. The coated substrate is subsequently cooled to 500 DEG C, then the oxygen pressure is ... to 0.01 ... Original abstract incomplete.