| 摘要 |
PURPOSE:To make a semiconductor memory high-speed and high-sensitivity by arranging a conductive layer for bit line through an insulating film on the charge storage region corresponding to the drain region of a static induction transistor and connecting the gate region and the source region to the word line and the reference potential line respectively. CONSTITUTION:N<->-type layer 14 is epitaxially grown on N<+>-type Si substrate 12, and slim P<+>-type gate regions 16A to 10F which should become word lines are formed in layer 14 by diffusion. Next, the outside of region 16A is buried with insulating film 18A, and parts between regions 16B and 16C and between regions 16D and 16E are buried with insulating films 18B and 18C respectively, and further, the outside of region 16F is buried with insulating film 18D, thereby insulating regions. After that, insulating film 20 for surface protection is caused to adhere onto all the surface, and film 20 is converted to thin film 21X on epi-layer 14 between regions 16A and 16B, 16C and 16D, and 16E and 16F which should become channel regions. After that, metallic layer 23X is caused to adhere onto this film 21X in matrix and is connected to conductive layers 22A to 22C for bits which are formed slimly, and layer 12 is used as a common source region and is connected to the reference potential line. |
