| 摘要 |
PROBLEM TO BE SOLVED: To provide a split gate type flash memory and a method for manufacturing the same. SOLUTION: The method comprises a first step of providing a semiconductor substrate having a floating gate with a first gate insulation film, a first spacer, a first junction region and a first conductive line, a second step of sequentially forming a first insulation film, a first conductive film and a second insulation film, a third step of etching the second insulation film and the first conductive film in a predetermined thickness, a fourth step of forming a third insulation film on parts of the first conductive line and the first conductive film, a fifth step of removing the remaining second insulation film to expose the first conductive film, a sixth step of forming a second gate insulation film and word lines by etching exposed first conductive film and the first insulation film, a seventh step of forming second space, a eighth step of forming a second junction region in the substrate, a ninth step of forming an interlayer insulation film on the entire surface of the substrate and a tenth step of forming a second conductive line contacting with the second junction region.
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