| 摘要 |
<p>The transistor comprises a buried base P region (13), a buried emitter N+ region (14) with elongate portions (fingers), deep contact P+ base regions (15), emitter N+ interconnection regions (16,17) serving balancing resistor functions, and base, emitter, and collector surface contact electrodes. To provide a higher current gain and a larger safe operation area, with each emitter "finger" (14) there are associated a screening P region (22) interposed between the "finger" (14) and a part (16) of the respective N+ interconnection region, and a contact N+ region (17A) which extends to the "finger" and is surface connected to the screening P region (22) by a dedicated electrode (23). <IMAGE></p> |
