Method for programming NAND-type flash memory device using bulk bias

摘要

A method for programming a NAND-type flash memory device is provided. In the method for programming a NAND-type flash memory device having a plurality of strings two dimensionally arranged on the bulk area of a first conductivity type and a plurality of bitlines arranged in parallel on the plurality of strings, a bulk bias corresponding to a reverse bias is applied to the bulk area of the first conductivity type. At least one bitline is selected among the plurality of bitlines. At least one string is selected from among the plurality of strings connected to the selected bitline in parallel. At least one cell is programmed from among the plurality of cells within the selected strings.