Electrode connections for semiconductor devices

摘要

A semiconductor device includes a semiconductor substrate (1) having a surface, an electrode (4a) comprising a first metal disposed on the surface of the semiconductor substrate (1), a wiring layer (9a) comprising a second metal which is different from the first metal, and a barrier metal layer (8a) interposed between the electrode (4a) and the wiring layer (3a). The barrier metal layer (8a) comprises a third metal which prevents solid phase diffusion between the first metal and the second metal even if heat is applied. Therefore, the electrode (4a) and the wiring layer (9a) are connected with reduced contact resistant and high reliability.