| 摘要 |
A MOSFET transistor, in which source and drain regions are formed at a certain distance away from each other in a surface area of a semiconductor substrate having a first conductivity type, and a gate electrode is formed on the surface of the substrate through a gate insulating film formed thereon between the source and drain regions, and in which a channel region located in the surface area of the substrate between the source and drain regions is composed of different concentration regions, and a threshold voltage of a high concentration channel region is lower than that of a low concentration channel region. |
