GROUP THREE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE FOR INCREASING EXTERNAL QUANTUM EFFICIENCY BY USING MESH ELECTRODE

摘要

PURPOSE: A group three nitride semiconductor light emitting device is provided to obtain sufficient current diffusion and increase external quantum efficiency by using a transmissive layer having high conductivity. CONSTITUTION: A lower contact layer(13) is formed on a front face of a substrate(11). The lower contact layer is formed with an n-type group three nitride semiconductor. An active layer(14) is formed on a predetermined region of the lower contact layer. The active layer is formed with a group three nitride semiconductor. An upper contact layer(15) is formed on the active layer. The upper contact layer is formed with a p-type group three nitride semiconductor. A transmissive metal electrode layer(26) is formed on the upper contact layer. A mesh electrode layer(27) is formed on the transmissive metal electrode layer. An ohmic contact layer is formed on an exposed surface of the lower contact layer.