发明名称 Patterning process including simultaneous deposition and ion milling
摘要 A process for forming a pattern on a substrate which includes depositing a film-forming material from above a mask formed on the substrate and forming a film on the mask and in regions of the substrate not covered by the mask, wherein the film formation is carried out while irradiating an ion beam towards the mask so that the deposition on the side surface portion of a deposition material being deposited on the mask is inhibited by ion milling. An electronic device such as a micro field emission cathode or a multi-layer circuit structure is effectively formed using the process.
申请公布号 US5378658(A) 申请公布日期 1995.01.03
申请号 US19920951801 申请日期 1992.09.28
申请人 FUJITSU LIMITED 发明人 TOYODA, OSAMU;BETSUI, KEIICHI
分类号 C23C14/04;H01J9/02;H01L21/302;H01L21/3065;H05K3/14;(IPC1-7):H01L21/31 主分类号 C23C14/04
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