Thin film continuous dynodes for electron multiplication

摘要

A continuous thin film dynode includes a substrate with at least one channel having a channel wall, an isolation layer overlying the channel wall, and a thin film overlying the isolation layer. The thin film includes a current carrying portion and an electron emissive portion overlying the current carrying portion. The electron emissive portion is essentially free of a material which is silica-rich, alkali-rich, and lead-poor. The current carrying portion is essentially free of a material which is lead-rich.