| 发明名称 |
Method for chemical vapor deposition of titanium nitride films at low temperatures |
| 摘要 |
Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550 DEG C. This is accomplished by minimizing the boundary layer thickness over the substrate.
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| 申请公布号 |
US5378501(A) |
申请公布日期 |
1995.01.03 |
| 申请号 |
US19930131900 |
申请日期 |
1993.10.05 |
| 申请人 |
FOSTER, ROBERT F.;HILLMAN, JOSEPH T. |
发明人 |
FOSTER, ROBERT F.;HILLMAN, JOSEPH T. |
| 分类号 |
C23C16/34;C23C16/44;C23C16/455;C23C16/458;H01L21/28;H01L21/285;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/34 |
| 代理机构 |
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