发明名称 |
Method of making a semiconductor device with a capacitor |
摘要 |
A method of manufacturing a semiconductor device having a capacitor comprises the steps of forming a silicon oxide layer on a semiconductor substrate, forming a first silicon nitride layer on the silicon oxide layer, forming a polycrystalline silicon layer as a lower electrode layer of the capacitor on the first silicon nitride layer, subjecting the polycrystalline silicon layer to the natural outside atmosphere so as to form a native oxide layer on the polycrystalline silicon layer, removing the native oxide layer to expose the polycrystalline silicon layer to an inactive gas atmosphere, Forming a second silicon nitride layer on the exposed polycrystalline silicon layer subjecting the second silicon nitride layer to the outside atmosphere so as to form a capacitor oxide layer on the polycrystalline silicon layer, the second silicon nitride layer and the capacitor oxide layer working as a dielectric layer of the capacitor, and forming an upper electrode layer of the capacitor on the capacitor oxide layer.
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申请公布号 |
US5378645(A) |
申请公布日期 |
1995.01.03 |
申请号 |
US19930062752 |
申请日期 |
1993.05.18 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
INOUE, NOBUHIKO;YOSHIMARU, MASAKI |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/70 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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