PHOTOSENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a photosensitive resin composition having high sensitivity not only to a g-line (wavelength; 436 nm) or an i-line (wavelength; 365 nm) of a conventional high-pressure mercury vapor lamp but to a light source of a short wavelength such as a KrF excimer laser (248 nm) or an ArF excimer laser (193 nm) and also having high plasma resistance when used as a resist.

SOLUTION: By incorporating nano-diamond into a photosensitive resin composition, high sensitivity not only to a g-line (wavelength; 436 nm) or an i-line (wavelength; 365 nm) but to a light source of a short wavelength such as a KrF excimer laser (248 nm) or an ArF excimer laser (193 nm) and improved plasma resistance are provided to the composition.

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