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发明名称
PROCESS OF ETCHING OF SILICON DIOXIDE ON SILICON SUBSTRATE
摘要
申请公布号
RU2025823(C1)
申请公布日期
1994.12.30
申请号
SU19925039893
申请日期
1992.04.23
申请人
VALIEV KAMIL A;VELIKOV LEONID V;DUSHENKOV SERGEJ D
发明人
VALIEV KAMIL A;VELIKOV LEONID V;DUSHENKOV SERGEJ D
分类号
H01L21/02;(IPC1-7):H01L21/02
主分类号
H01L21/02
代理机构
代理人
主权项
地址
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