Memory cell array structure adapted to maintain substantially uniform voltage distribution across plate electrode

摘要

Disclosed is a wiring structure for supplying a plate electrode voltage to a memory device comprising a plurality of memory cells. The wiring structure includes a first plurality of metal wires arranged in a first direction along peripheral and center portions of a plate electrode and a second plurality of metal wires arranged on the first metal wires in a second direction intersecting the first direction. The second metal lines are connected to the first metal wires via first electrical contacts and the first metal lines are connected to the plate electrode via second electrical contacts.