| 摘要 |
High voltage semiconductor device comprises: (a) a semiconductor substrate (11) of 1st conductivity type; (b) a 1st region (12) disposed at a 1st surface of the substrate to provide a main rectifying junction; (c) a 2nd region (13,17,21) of 2nd conductivity type formed at 1st surface of substrate and surrounding the 1st region, the 2nd region forming a p-n junction between the 2nd region and the substrate having a max. depth below the 1st surface; and (d) a 3rd region (14,18,22) of 2nd conductivity type at 1st surface of substrate and having reduced conductivity compared to the 2nd region and forming a p-n junction between the 3rd region and substrate. |
