| 发明名称 |
Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip. |
| 摘要 |
<p>An n-channel MOSFET (102), a p-channel MOSFET (104) and a nonvolatile memory cell (100) are provided for the same semiconductor substrate (1). The nonvolatile memory cell (100) is formed on the semiconductor substrate (1), the n-channel MOSFET (102) is formed in a p-type well region (11) of the semiconductor substrate (1), and the p-channel MOSFET (104) is formed in an n-type well region (12) of the semiconductor substrate (1).</p> |
| 申请公布号 |
EP0421446(B1) |
申请公布日期 |
1994.12.28 |
| 申请号 |
EP19900119100 |
申请日期 |
1990.10.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
UEMURA, TERUO, C/O INTELLECTUAL PROPERTY DIV.;HANADA, NAOKI, C/O INTELLECTUAL PROPERTY DIV. |
| 分类号 |
H01L21/8238;H01L21/8247;H01L27/092;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L27/115 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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