Method of plasma chemical vapor deposition of layer with improved interface.
摘要
<p>The present invention is directed to a method of improving the interface between a surface and a layer which is deposited on the surface. The surface can be the surface of a body (38) or the surface of a layer deposited on a body (38). The surface is subjected to the plasma of an inactive gas which does not adversely affect the surface or deposit a layer thereon. Then the surface is subjected to a plasma of a deposition gas which causes the deposition gas to decompose and deposit a layer on the surface. <IMAGE></p>
申请公布号
EP0630989(A2)
申请公布日期
1994.12.28
申请号
EP19940109547
申请日期
1994.06.21
申请人
APPLIED MATERIALS, INC.
发明人
ROBERTSON, ROBERT;KOLLRACK, MARC MICHAEL;LEE, ANGELA T.;TAKEHARA, TAKAKO;FENG, GUOFU JEFF;CONNOLLY, ROBERT;LAW, KAM;MAYDAN, DAN
