Semiconductor device and method of fabricating the same,申请号US19930005670-传众专利搜索

发明名称	Semiconductor device and method of fabricating the same
摘要	A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
申请公布号	US5376590(A)	申请公布日期	1994.12.27
申请号	US19930005670	申请日期	1993.01.19
申请人	NIPPON TELEGRAPH AND TELEPHONE CORPORATION	发明人	MACHIDA, KATSUYUKI;MURASE, KATSUMI;SHIMOYAMA, NOBUHIRO;TSUCHIYA, TOSHIAKI;TAKAHASHI, JUNICHI;MINEGISHI, KAZUSHIGE;TAKAHASHI, YASUO;NAMATSU, HIDEO;IMAI, KAZUO
分类号	H01L21/3105;H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L21/02	主分类号	H01L21/3105
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