发明名称 MOS half-bridge drive circuit, particularly for power MOS half-bridges
摘要 A drive circuit includes a voltage source supplying a reference voltage at its output; a voltage elevating circuit connected to a supply voltage and to the output of the voltage source, and supplying at its output, under normal operating conditions, a drive voltage greater than the supply voltage and increasing with the reference voltage. The input of the voltage source is connected to the output of the voltage elevating circuit, and defines a positive feedback path resulting in an increase in the reference voltage corresponding to an increase in the drive voltage, and therefore results in a corresponding increase in the drive voltage up to a maximum permissible value, thus providing for a sufficient drive voltage for driving the gate-source junction of power MOS transistors, even in the presence of a low supply voltage.
申请公布号 US5376832(A) 申请公布日期 1994.12.27
申请号 US19930029691 申请日期 1993.03.11
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 GARIBOLDI, ROBERTO;LEONE, MARCELLO
分类号 H02M1/08;H03F3/26;H03K17/06;H03K17/687;(IPC1-7):H03L5/00 主分类号 H02M1/08
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