| 摘要 |
A dry etching method wherein one compound selected from mercaptan, thioether and disulfide each having a fluorocarbon side chain is used as a main component of an etching gas. These compounds may form CFx+ and S on dissociation due to electric discharges, and contribute to high-rate etching and surface protection of a wafer. If a halogen compound such as CO, SOF2 or NOF is added to the etching gas, a high-rate etching reaction due to extraction of O atoms from SiO2 and structural reinforcement of carbonaceous polymer become possible. Also, S2F2 may be added for reinforcing deposition of S. These effects lead to a reduction of the deposit amount of polymer necessary for highly selective processing, and contribute greatly to low pollution in a process.
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