| 摘要 |
A semiconductor device and its manufacturing method are provided to reduce resist coating spots and to improve the precision of CD(Critical Dimension) by decreasing gradually the size of a stepped portion between an IC region and a scribe line using an opening portion with a step type structure. A semiconductor substrate(121) with a metal line layer and an insulating layer is provided. An opening portion(136a,137a,138a) is formed on the resultant structure to expose partially the metal line layer to the outside. A second metal line layer is formed on the resultant structure to connect electrically the metal line with thin film elements through the opening portion. The opening portion has a step type structure.
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