| 发明名称 |
Semiconductor device having bipolar-mos composite element pellet suitable for pressure contacted structure |
| 摘要 |
A semiconductor device having a bipolar MOS composite element pellet suitable for a compression structure. In this pellet, a semiconductor substrate on which a MOS composite element is formed is electrically connected to an external part by an electrode plate compressed to the substrate.
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| 申请公布号 |
US5376815(A) |
申请公布日期 |
1994.12.27 |
| 申请号 |
US19930123988 |
申请日期 |
1993.09.21 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOKOTA, YOSHIO;KITAGAWA, MITSUHIKO;KARASAWA, DAI |
| 分类号 |
H01L21/52;H01L23/48;H01L23/482;H01L29/417;H01L29/739;H01L29/78;(IPC1-7):H01L29/10;H01L29/46 |
主分类号 |
H01L21/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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