发明名称 |
Virtual ground read only memory circuit |
摘要 |
A semiconductor read only memory device includes memory cells arranged in a matrix of rows and columns; word lines crossing the matrix, wherein one word line is connected to each row of memory cells; and bit lines interdigitated with column lines and positioned such that each column of memory cells is between a bit line and a column line. The matrix is subdivided into cells, where each cell has four memory cells arranged symmetrically about a bit line in two rows and two columns. All four of the cells are connected to the bit line at a common electrical node, wherein selected cells are connected to a column line. The memory device also includes a row select driver for selecting memory cells in a single row; a column select driver for selecting a single column line; and circuitry for selecting one of the bit lines adjacent to a column line.
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申请公布号 |
US5377153(A) |
申请公布日期 |
1994.12.27 |
申请号 |
US19920982988 |
申请日期 |
1992.11.30 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
GURITZ, ELMER H.;CHAN, TSIU C. |
分类号 |
G11C17/12;H01L27/112;(IPC1-7):G11C7/00;G11C11/00 |
主分类号 |
G11C17/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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