SEMICONDUCTOR DEVICE INCLUDING FUSE REGION HAVING FUSE ISOLATION BARRIER AND METHODS OF FABRICATING THE SAME

摘要

A semiconductor device having a fuse isolation barrier and a fabricating method thereof are provided to absolutely cut a selected fuse by interrupting energy of a laser beam with the fuse isolation barrier, without damaging non-selected fuses. An interlayer dielectric(105) is formed on a semiconductor substrate(100), and plural fuses(110) are formed on the interlayer dielectric. An intermetal dielectric(115) is formed on the fuses, and a passivation layer(P) is formed on the intermetal dielectric. The passivation layer and the intermetal dielectric are sequentially patterned to form fuse windows which expose portions of top surfaces of the fuses. A fuse isolation barrier is formed between the fuses.