| 摘要 |
A mixed gas supply passage and a diffusion equipment for fabricating a semiconductor device are provided to form an oxide layer having a uniform thickness on an upper surface of a wafer by previously mixing and spraying an oxygen gas and a hydrogen gas. A mixed gas supply passage includes a first gas passage(410) supplying a first gas, a second gas passage(420) installed in the first gas passage for supplying a second gas, and a gas mixing part(430) coupled to one end of the first gas passage to communicate the first gas passage and the second gas passage. One end of the second gas passage is flush with one end of the first gas passage. The gas mixing part has a gas mixing space for mixing the first gas with the second gas. The gas mixing part has plural spraying holes formed on a surface opposite to the end of the first gas passage.
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