A photo mask for detecting misalignment of stepper blades and undesirable pattern array on an wafer comprises: a number of highest limit alignment marks 5 to 8 located in the outside of a field pattern area for forming product dies on the wafer and indicating the highest limits in setting positions of the stepper blades respectively and a number of lowest alignment marks 9,10 and 11 located respectively in three corners of the said outside of the field pattern area and indicating the lowest limits in setting positions of the stepper blades respectively, and forming a predetermined geometrical shape together.
申请公布号
US5376482(A)
申请公布日期
1994.12.27
申请号
US19930065241
申请日期
1993.05.20
申请人
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
发明人
HWANG, JOON;LEE, HYUN G.;KIM, HONG L.;YI, YOUNG B.;IN, JAE, S.