发明名称 |
Method of making a flash EPROM device utilizing a single masking step for etching and implanting source regions within the EPROM core and redundancy areas |
摘要 |
A flash EPROM device is provided for programmably storing digital data within a core array of electrically programmable transistors. A row or column within the array can be substituted for a spare or redundant row or column selectively connected to row or column decoder circuits by a redundancy select transistor. Self-aligned source regions within the array and redundancy select area are provided using a single mask for opening the self-aligned source regions and for implanting a light dosage of phosphorus directly into the underlying silicon substrate. Careful control and elimination of residue within the etched area via a subsequent wet etch helps ensure the implant edges are anisotropically controlled and isolated for subsequent lateral diffusion/drive-in. Accordingly, the flash EPROM device of a plurality of transistors within the array and within the redundancy select area are process controlled and demonstrate a significant reduction in threshold skewing. A result being an array of electrically programmable transistors which read, write and erase at substantially the same threshold level for each transistor.
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申请公布号 |
US5376573(A) |
申请公布日期 |
1994.12.27 |
申请号 |
US19930165445 |
申请日期 |
1993.12.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RICHART, ROBERT B.;GARG, SHYAM G.;WANG, FEI |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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