发明名称 |
Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response |
摘要 |
The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.
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申请公布号 |
US5376810(A) |
申请公布日期 |
1994.12.27 |
申请号 |
US19930173133 |
申请日期 |
1993.12.21 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
HOENK, MICHAEL E.;GRUNTHANER, PAULA J.;GRUNTHANER, FRANK J.;TERHUNE, ROBERT W.;HECHT, MICHAEL H. |
分类号 |
H01L27/148;(IPC1-7):H01L29/796;H01L27/14;H01L31/00 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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