CONDUCTING WIRING MANUFACTURING METHOD USING PLANARIZATION OF POLYSILICON LAYER

摘要

The method includes the steps of etching the insulating layer (21) and conductive layer (10) to form a contact hole (22), planarizing a polysilicon layer (23) for conductive wiring, etching the layer (23) at a predetermined thickness to flatten the layer (23) on the multilayered wiring structure, and etching the layer (23A) by mask patterning process to form a conductive wiring on the substrate. Pref. the layer (23) is formed to 6000 angstroms and etched back to 5000 angstroms in thickness.