MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of forming a contact hole passing through the insulating film (2) on the semiconductor substrate (1) to form an adhesion layer (3), depositing a CVD tungsten film (4) in the contact hole, etching-back the semiconductor structure to remove the CVD tungsten film (4) formed on the portion except the contact hole, wet-etching the surface of the insulating film (2), depositing a selective CVD tungsten film (14) on the contact hole buried by the blankel CVD tungsten process and on the etched insulating film and forming a metallic layer (6).