| 摘要 |
The method includes the steps of forming a dielectric layer (3), a cathode pattern and gate (7) on a back glass (7) on a back glass plate (3), dry-etching the gate to form a hole (71) into the gate, forming a cavity into the layer (3), forming a metallic layer (11) on the gate by using an electron beem depositing apparatus as rotating the FED structure, forming a microtip-type cathode (9) on the inner side of the cavity (51) by using the electrolysis and removing the metal ions (92) and metallic layer (11), thereby forming microtip-type cathodes with a uniform structure.
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