| 摘要 |
<p>PURPOSE:To eliminate the need for photoetching stage of a transparent conductive film and to reduce the cost of production in forming a transparent pixel electrode by forming the pixel electrode in a hole part formed in the protective film of a thin-film transistor(TFT). CONSTITUTION:The protective film PSV11 of the TFT1 of the liquid crystal display device consisting of the TFT1 and the pixel electrode ITO1 as the constituting elements of the pixel is provided with the hole part HOP and the pixel electrode ITO1 is formed in the hole part HOP. A resist is formed on the protective film PSV11 of the TFT1 and the hole part HOP is formed in the position where the pixel electrode ITO1 of the protective film PSV11 is to be formed. After conductive film is formed on this resist, the resist is removed. The transparent pixel electrode ITO1 is composed of a third conductive film d3 and this third conductive film d3 consists of the transparent conductive film formed by sputtering.</p> |
