| 摘要 |
PURPOSE:To heat a foundation conductor film in a high vacuum, avoid the oxidation of Ti, etc., on the surface of the foundation conductor film and improve the electromigrating strength of a wiring by a method wherein, when the foundation conductor film is built up by a sputtering method, a treatment which produces silicide is performed. CONSTITUTION:After a semiconductor substrate 1 is housed in the treatment chamber of a sputtering apparatus, a foundation metal film 11 made of titanium- tungsten (TiW) alloy containing 10-60atm.% of titanium(Ti) is built up on the semiconductor substrate 1. At that time, the temperature of the semiconductor substrate 1 is controlled to be 600 deg.C-700 deg.C. In this process, a silicide layer 12 made of Ti-W-Si is formed in a contact boundary between the foundation metal film 11 and the semiconductor substrate 1. That is, when the foundation conductor film 11 is built up on the semiconductor substrate 1, in a high vacuum, a silicide layer 12 is formed between the foundation metal film and a diffused layer 4 simultaneously. |
