SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

摘要

This invention aims at providing a semiconductor device, and a production method thereof, which can form an arbitrary carrier concentration distribution at an arbitrary depth of a semiconductor and which does not require high temperature heat-treatment. In a semiconductor device using a semiconductor layer containing predetermined impurities and deposited and grown on a substrate, the semiconductor device of the present invention is characterized in that a ratio of the concentration of the impurity in the semiconductor layer to the concentration of the carrier supplied by the impurity changes in the direction of a film thickness of the semiconductor layer. In a method of depositing and growing a semiconductor layer containing a predetermined impurity on a substrate, the method of the present invention is characterized in that ion irradiation is continuously applied to the growth surface of the semiconductor layer and ion energy or ion dose, or both, of ion irradiation are changed with time so that the ratio of the concentration of the impurity in the semiconductor layer to the concentration of the carrier supplied by the impurity changes in the direction of a film thickness of the semiconductor layer.