| 摘要 |
PURPOSE: To make a leakage current density smaller than that of an HDC material having identical thickness and electrode by making the leakage current density of a material having first and third leakage current densities substantially smaller than that of the material having a second leakage current density. CONSTITUTION: A first thin dielectric buffer layer is formed of a material 32, which has a first medium level dielectric constant and a second leakage current density, and a layer having a high dielectric constant is formed of a material 34, which has a first leakage current density, over the first thin dielectric butter layer. Furthermore, a second thin dielectric buffer layer is formed of a material 36, having a second medium level dielectric constant and a third leakage current density over the layer of a high dielectric constant. Then, the leakage current density of the material, having the first and the third leakage current densities, is made substantially smaller than that of the material having the second leakage current density. Thus, deterioration of dielectric constant becomes moderate and the leakage current can be structurally reduced and compensated. |
