| 摘要 |
PURPOSE: To provide a method for manufacturing conductive wiring for a semiconductor device, which forms a conductive wiring on the surface of a semiconductor substrate, having sharp bends due to irregularities, so as to prevent contact failure and contact resistance increase. CONSTITUTION: A word line 24, etc., of a semiconductor element is formed, a first insulating layer 28 is formed with a uniform thickness on the surface of a semiconductor substrate having sharp bends, and the upper part of the first insulating layer 28 is coated with a first conductivity-type layer 32 for electrical connection with the semiconductor element. Then on the upper part of the first conductivity-type layer 32, a planarizing second insulating layer is formed, and the insulating layer planarized to expose the first conductivity- type layer part to be a conductive wiring region is photoetched. A second conductivity-type pattern 38 is formed on the exposed first conductivity-type layer 32, the exposed planarizing insulating layer and the first conductivity-type layer 32 are selectively removed from the second conductivity-type pattern 38, and conductive wiring is formed on the surface of the semiconductor substrate. |
