| 摘要 |
PURPOSE:To detect the correcting amount of a focus sensor with high accuracy so as to obtain a high-resolution pattern image by measuring focus measuring patterns in a plurality of areas on a developed wafer to be inspected and finding the focusing positions and the inclination of reticle projecting surfaces in each production process during the manufacture of a semiconductor element. CONSTITUTION:A resist is applied to the surface of a wafer WF by means of a resist coater CO. Then the wafer WF is put on a wafer chuck WS and positioned on an X-Y stage XYS by measuring the positions of marks WAML and WAMR with an off-axis optical system OE. After the stage XYS is moved until a first shot (exposed area) comes below a projection lens LN and the distance between the wafer WF and lens LN is adjusted to a set value, auto focusing is performed for correcting the inclination of the focal plane. After auto focusing, alignment is performed for aligning the reticle RT with the wafer WF. |
