摘要 |
FIELD: electronic engineering. ^ SUBSTANCE: proposed Schottky-barrier high-power microwave field-effect transistor has semi-insulating gallium arsenide substrate with n active layer of maximum thickness 0.4 mum and dope concentration of 2 x 1017 -1 x 1018 cm3; it is made in the form of strip of at least one sequence of source, gate, and drain electrodes; disposed between source-drain pairs are semi-insulating gallium arsenide regions, 4 - 6 mum thick; provided in source-drain pairs are passages with groves, 0.9 - 1.3 mum thick and 0.2 - 0.3 mum deep; the latter accommodate single gate electrodes of maximum 0.7 mum in length; single gate electrodes are spaced apart from groove end on source and drain sides through 0.1 0.3 and 0.5 - 0.7 mum, respectively. ^ EFFECT: enhanced power output and power gain of proposed transistor which enhances its efficiency. ^ 2 cl, 1 dwg, 1 tbl |