发明名称 МОЩНЫЙ СВЧ ПОЛЕВОЙ ТРАНЗИСТОР С БАРЬЕРОМ ШОТКИ
摘要 FIELD: electronic engineering. ^ SUBSTANCE: proposed Schottky-barrier high-power microwave field-effect transistor has semi-insulating gallium arsenide substrate with n active layer of maximum thickness 0.4 mum and dope concentration of 2 x 1017 -1 x 1018 cm3; it is made in the form of strip of at least one sequence of source, gate, and drain electrodes; disposed between source-drain pairs are semi-insulating gallium arsenide regions, 4 - 6 mum thick; provided in source-drain pairs are passages with groves, 0.9 - 1.3 mum thick and 0.2 - 0.3 mum deep; the latter accommodate single gate electrodes of maximum 0.7 mum in length; single gate electrodes are spaced apart from groove end on source and drain sides through 0.1 0.3 and 0.5 - 0.7 mum, respectively. ^ EFFECT: enhanced power output and power gain of proposed transistor which enhances its efficiency. ^ 2 cl, 1 dwg, 1 tbl
申请公布号 RU2005137680(A) 申请公布日期 2007.06.10
申请号 RU20050137680 申请日期 2005.12.02
申请人 Федеральное государственное унитарное предпри тие"Научно-производственное предпри тие "Исток" (ФГУП НПП "Исток") (RU) 发明人 Лапин Владимир Григорьевич (RU);Петров Константин Игнатьевич (RU);Темнов Александр Михайлович (RU)
分类号 H01L29/00 主分类号 H01L29/00
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