MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To reduce the diffused layer resistance and the contact hole resistance of a semiconductor integrated circuit device without deteriorating its reliability. CONSTITUTION:A first metal silicide layer 5a which is made of silicide of alloy of one of Ti, Zr and Hf and one of W and Mo is provided over the whole surface of a diffused layer 5 which is formed on the main surface of a semiconductor substrate 1 and of which an n-type channel MOS-FET 4 is composed. A metal film 9 which is formed by a selective CVD method or a plating method is buried in a contact hole 12 which connects the silicide layer 5a to a first layer wiring 11.