Integrierte FET-Halbleiterschaltung mit einer Mehrzahl gleich aufgebauter Betriebsspannungserzeugungsschaltungen

摘要

A supply voltage adjusting circuit of a MOSFET device is disclosed in which an integrated circuit of a memory circuit or a logic circuit having a field effect transistor and voltage lowering circuits 10 distributed around the integrated circuit are formed on the same substrate. DC voltage of 3V which is a suitable operation level of the memory circuit or the logic circuit can be supplied, and uneven voltage at various portions caused by different length of interconnections can be prevented. The voltage lowering circuits may comprise a single transistor or a darlington connected combination, in association with thresholding diodes and connected in the voltage supply path.