| 摘要 |
PURPOSE:To provide a high quality semiconductor luminous element array having uniform luminous element characteristics at low cost by forming a high resistance portion in the upper part of a semiconductor crystal layer through ion implantation, thus electrically separating a luminous element, forming electrodes on a flat surface, and thereby integrating such luminous elements at a higher density. CONSTITUTION:A buffer layer 3 and a reflection layer 4 are formed on a substrate 2, and a cladding layer 5, a luminous layer 6, a cladding layer 7 and a contact layer 8 are formed on the reflection layer 4 in this order. Ion implantation is performed using a Au film 9 as a mask to separate a luminous element 11. Electrodes 13 are led out through the upper face of a SiN reflection preventive film 12 formed on the upper face of a semiconductor crystal layer. |
