| 摘要 |
PURPOSE:To provide a contamination evaluation technique with which the measurement of thin objective foreign substance such as a thin film can be analized and evaluated in a highly precise manner. CONSTITUTION:An electromagnet 13 or an electric field generating device is provided in the vicinity of the sample 2 to be measured on the EPMA device 1 with which the evaluation of contamination is conducted by detecting the X-rays 8 generated by allowing an electron beam 7 to impinge upon a sample 2. As a result, by providing a magnetic field generating means or an electric field generating means in the vicinity of the sample to be measured, the progressing direction of the electron beam impinging upon the sample can be controlled, and as a result, the electron beam impinging upon a very thin material to be measured, such as a thin film formed on a substrate, can be made progress in parallel with the substrate. Accordingly, characteristic X-rays can be generated by exciting a large quantity of constituent atoms of the thin film part only, the foreign substance such as metal and the like, with which the thin film part is contaminated, can be detected easily, and the contamination evaluation of foreign substance can be conducted in a precise manner. |
