Methods of forming copper vias with argon sputtering etching in dual damascene processes

摘要

A method of forming a via using a dual damascene process can be provided by forming a via in an insulating layer above a lower level copper interconnect and etching into a surface of the lower level copper interconnect in the via using Argon (Ar) sputtering. Then a trench is formed above a lower portion of the via and an upper level copper interconnect is formed in the lower portion of the via and in the trench using a dual damascene process.