| 摘要 |
PURPOSE:To enable to store the data stably, by using the D type MOS transistor for the part of the feedback transfer gate and by connecting the gate to the output terminal of feedback inverter. CONSTITUTION:In the latch circuit using the MOS transistors TrQ1 to Q6 and constituted with the main inverter 1, feedback inverter 2, data input transfer gate 3 and feedback transfer gate 4, as the gate 4, D type MOS TrQ6 is used and the gate is connected to the output terminal of the inverter 2. Further, when G1(gate 3) =0 and the point A is 1 and point B is 0, or the point A is 0 and point B is 1, curretnt flows through TrQ6 to TrQ4 or through TrQ6 from TrQ3 respectively, but since the saturation current of TrQ6 is greater than the leakage current of TrQ5, if the saturation current of TrQ3 is greater than the leakage current of TrQ6, the point B holds the potential. |
