| 摘要 |
PURPOSE:To provide the method capable of forming deposited layers varying in etching resistance to pattern shapes with a high resolution and forming the patterns by etching with the high resolution. CONSTITUTION:This pattern forming method includes a stage for forming the first layer 2 on a substrate 1 and patterning and forming the second layer 3 of the material different from the material of the first layer 2 on the surface of the first layer 2, a stage for bringing the substrate surface formed with the first layer 2 and the second layer 3 into contact with a soln. 6 contg. plural kinds of resins varying in materials thereafter and allowing the resin layers 8, 7 different from each other to grow respectively selectively on the first and second layers 2, 3 and a stage for etching the resin layer 8 grown on the first layer 2 and the first layer 2 with the resin layer 7 grown on the second layer 3 as a mask. |
