Information-recording thin film and information recording medium and also a process for their production

摘要

A recording film (3) of the phase-change type of an Sb-Te-Ge system or of an Sb-Te-In system includes at least one of the following elements: lanthanoide elements, Ag, Ba, Co, Cr, Ni, Pt, Si, Sr, Au, Cd, Cu, Li, Mo, Mn, Zn, Al, Fe, Pb, Na, Cs, Ga, Pd, Bi, Sn, Ti and V. A component (3b) having a high melting point is formed as a deposit in the recording film (3) and exists alongside a phase-change component (3a), thereby preventing the recording film from flowing and/or segregating during recording and erasing. The recording film may also serve as a thin film for high-resolution reading out, in that it masks an optical disk on which the recording is created by cleavage, an optical disk of the phase-change type or a magnetooptical disk, whereby the number of possible read-out operations with high resolution can be increased to a high degree.