| 摘要 |
<p>A GaN-based semiconductor light-emitting element in which piezoelectric spontaneous polarization can be suppressed in the thickness direction of an active layer while lowering the driving voltage of a light-emitting diode. The GaN-based semiconductor light-emitting element comprises a first GaN-based compound semiconductor layer (21) of first conductivity type having a top face parallel with the face A, an active layer (22) having a top face parallel with the face A, a second GaN-based compound semiconductor layer (23) of second conductivity type having a top face parallel with the face A, and a contact layer (24) composed of a GaN-based compound semiconductor and having a top face parallel with the face A which are formed sequentially in layers. A first electrode (25) is formed on the first GaN-based compound semiconductor layer (21) and a second electrode (26) is formed on the contact layer (24).</p> |
