| 摘要 |
PURPOSE:To provide a BiCMOS adaptable to an improvement in an integration degree and the lowering of voltage and having high reliability. CONSTITUTION:A BiCMOS integrated circuit is composed of selective polycrystalline silicon layers 45 formed into contact holes bored to an emitter diffusion layer 39 formed to a bipolar transistor section A1 and the ground contact section 44 of a CMOS transistor section A2 respectively and the silicides 46 of a high melting-point metal, and constituted so as to have an emitter leading-out electrode 47 and a ground wiring layer 48 brought into contact with the upper ends of the selective polycrystalline silicon layers 45. The emitter leading-out electrode 47 and the ground wiring 48 can be shaped by the same process, no polysilicon is left on an insulating layer and no short-circuit failure of wirings is generated, and the resistance of the ground wiring 48 can be reduced while no stepped section due to the ground wiring is generated. The semiconductor integrated circuit device is suitable as the SRAM of a BiCMOS adaptable to an improvement in an integration degree and the lowering of voltage. |
